Overcoming the Tradeoff of Visible Transparency and Electrical Conductance via Dual Smoothing of Dielectric/Metal Interfaces in Cu-Thin-Layer-Based Transparent Electrodes

The rapid advancement of flexible optoelectronic devices, such as light-emitting diodes, solar cells, and electrochromic devices, necessitates the development of high-performance flexible transparent electrodes (TEs). Dielectric/metal/dielectric (DMD)-type TEs are promising alternatives to conventional indium tin oxide (ITO) due to the high electrical conductance, excellent visible transparency, and sufficient mechanical flexibility. However, the tradeoff between electrical conductance and visible transparency poses a challenge to performance enhancement. This study introduces an Ar-ion-mediated interface modification method to address this tradeoff by dual smoothing of dielectric/metal interfaces in TiO