半导体纳米结构
包络线(雷达)
半导体
拉伤
材料科学
纳米结构
凝聚态物理
功能(生物学)
光电子学
纳米技术
物理
工程类
生物
电信
雷达
进化生物学
解剖
作者
Andrea Secchi,Filippo Troiani
出处
期刊:Physical review
[American Physical Society]
日期:2024-07-11
卷期号:110 (4)
被引量:1
标识
DOI:10.1103/physrevb.110.045420
摘要
Strain represents an ubiquitous feature in semiconductor heterostructures, and can be engineered by different means in order to improve the properties of various devices, including advanced MOS-FETs and spin-based qubits.However, its treatment within the envelope function framework is well established only for the homogeneous case, thanks to the theory of Bir and Pikus.Here, we generalize such theory to the case of inhomogeneous strain.By fully accounting for the relativistic effects and metric aspects of the problem, we derive a complete envelope-function Hamiltonian, including the terms that depend on first and second spatial derivatives of the strain tensor.
科研通智能强力驱动
Strongly Powered by AbleSci AI