Effects of PbO Content on the Dielectric Properties and Energy Storage Performance of (Pb0.97La0.02)(Zr0.97Ti0.03)O3 Antiferroelectric Thin Films

Journal of the American Ceramic SocietyVolume 94, Issue 6 p. 1647-1650 Effects of PbO Content on the Dielectric Properties and Energy Storage Performance of (Pb0.97La0.02)(Zr0.97Ti0.03)O3 Antiferroelectric Thin Films Xihong Hao, Corresponding Author Xihong Hao School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010, China†Author to whom correspondence should be addressed. e-mail: xhhao@imust.cnSearch for more papers by this authorJing Zhou, Jing Zhou State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, ChinaSearch for more papers by this authorShengli An, Shengli An School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010, ChinaSearch for more papers by this author Xihong Hao, Corresponding Author Xihong Hao School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010, China†Author to whom correspondence should be addressed. e-mail: xhhao@imust.cnSearch for more papers by this authorJing Zhou, Jing Zhou State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, ChinaSearch for more papers by this authorShengli An, Shengli An School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010, ChinaSearch for more papers by this author First published: 10 May 2011 https://doi.org/10.1111/j.1551-2916.2011.04460.xCitations: 54 J. Lou—contributing editor This work was financially supported from the National Natural Science Foundation of China under grant No. 51002071, the Chunhui Plan of Chinese Ministry of Education under grant No. Z2009-1-01036, the Research Fund for Higher Education of Inner Mongolia under grant No. NJ09080, the Natural Science Foundation of Inner Mongolia under grant No. 2010BS0802, and the project of State Key Laboratory of Advanced Technology for Materials Synthesis and Processing (Wuhan University of Technology) under grant No. 2010-KF-5. Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract A 400-nm-thick (Pb0.97La0.02)(Zr0.97Ti0.03)O3 (PLZT 2/97/3) antiferroelectric (AFE) thin films with different lead excess content (0%, 10%, and 20%) were successfully deposited on Pt(111)/TiO2/SiO2/Si substrates via a sol–gel process. The effects of lead excess content on the microstructure, dielectric properties, and energy storage performance of PLZT 2/97/3 AFE thin films were investigated in details. X-ray diffraction results displayed that AFE thin films were changed from the (111)-preferred orientation to the (100) and (111)-mixed orientation with increasing lead excess content. Dielectric measurements showed that AFE thin films with higher lead excess content exhibited enhanced dielectric constant and larger phase transformation fields. Thus, the energy storage density of AFE thin films was also remarkably improved from 3.3 to 11.7 J/cm3 at 1200 kV/cm. Citing Literature Volume94, Issue6June 2011Pages 1647-1650 RelatedInformation