In SEM a New Method for Nondestructive Internal Microtomography of Semiconductors and IC

It is very important to study a new method of nondestructive internal microtomography of semiconductors and IC. in this paper, we report some research results that were obtained in resent years using nondestructive internal microtomography (NDIMT) to study semiconductor materials(SM) and microelectronic devices (MD) in SEM. Now we can apply this method to detect the microstructures and defects in the subsurface of SM. The conditions of microstructures and the defects being or not in the subsurface of SM used directly depend on the quality of MD. By attaching a special attachment that was devised based on the NDIMT to SEM we can perform nondestructive internal microtomographic visualization of the subsurface of SM the tested SM may be used latter to produce MD. in this way NDIMT may be used to select good quality SM which can then be used for research and production of MD. The product yield and reliabilities of MD can therefore be improved.