宽带
放大器
谐振器
电气工程
电子工程
物理
跨阻放大器
拓扑(电路)
计算机科学
CMOS芯片
工程类
运算放大器
作者
Rahul Singh,Susnata Mondal,Jeyanandh Paramesh
标识
DOI:10.1109/tmtt.2020.2985676
摘要
This article presents design techniques to facilitate the use of the driving point impedance (Z 11 ) of one-port transformer-coupled resonators as wideband loads of millimeter-wave amplifier stages for a 28-GHz receiver front end. While the use of both the Z 11 of a one-port and the transimpedance (Z 21 ) of a two-port coupled resonator is considered to achieve a wideband response, it is shown that under conditions of low magnetic coupling and constrained network quality factor, the use of Z 11 can result in a higher gain-bandwidth product of low-noise amplifier (LNA) amplifier stages. The effect of the complex zero in the Z 11 response on the in-band gain ripple is shown to be alleviated merely by lowering the quality factor of the transformer's secondary coil; this strongly motivates the use of compact, nested-inductor transformer layouts. Implemented in a 65-nm CMOS process, a three-stage LNA (with Z 11 wideband loads in two stages) achieves a 24.4-32.3-GHz bandwidth (27.9 % fractional bandwidth), a peak S 21 of 24.4 dB (20.4 dB), a minimum noise figure (NF) of 4 dB (4.6 dB), and an input-referred P1dB of -23 dBm (-22 dBm) while consuming 22-mW (9.9 mW) power from a 1.1-V (0.85 V) supply. The use of compact transformers limits the LNA's footprint to only 0.12 mm2. A 26.5-32.5-GHz quadrature receiver prototype employing the LNA achieves a 29.5-dB peak conversion gain, a 5.3-dB minimum NF, and a -26-dBm inputreferred P1dB while consuming 33 mW from a 1.1-V supply.
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