薄膜晶体管
材料科学
阈值电压
压力(语言学)
光电子学
无定形固体
图层(电子)
电介质
栅极电介质
兴奋剂
X射线光电子能谱
晶体管
电压
纳米技术
电气工程
结晶学
化学
化学工程
工程类
哲学
语言学
作者
Xiaoming Huang,Chenfei Wu,Hai Lu,Fangfang Ren,Dunjun Chen,Rong Zhang,Youdou Zheng
摘要
Amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) having an ultra-thin nitrogenated a-IGZO (a-IGZO:N) layer sandwiched at the channel/gate dielectric interface are fabricated. It is found that the device shows enhanced bias stress stability with significantly reduced threshold voltage drift under positive gate bias stress. Based on x-ray photoelectron spectroscopy measurement, the concentration of oxygen vacancies within the a-IGZO:N layer is suppressed due to the formation of N-Ga bonds. Meanwhile, low frequency noise analysis indicates that the average trap density near the channel/dielectric interface continuously drops as the nitrogen content within the a-IGZO:N layer increases. The improved interface quality upon nitrogen doping agrees with the enhanced bias stress stability of the a-IGZO TFTs.
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