The study for substrate temperature effects on thermoelectric properties of the amorphous Si-Ge-Au thin films

The control of thermoelectric properties is attempted by changing the, substrate temperature. Amorphous thin films were prepared by the alternate deposition of Si and Ge doped heavily with Au in ultrahigh vacuum chamber. The temperature dependence of electrical resistivity of the sample deposited at 600 K has unique characteristics. The power factor decreases as the substrate temperature increases. Electrical resistivity and thermoelectric power have different tendency for the substrate temperature. The power factor can be enhanced by controlling electrical resistivity and thermoelectric power independently at the optimum substrate temperature.