材料科学
铁电性
金属
凝聚态物理
相变
相(物质)
电阻率和电导率
冶金
光电子学
化学
电气工程
电介质
物理
工程类
有机化学
作者
S. Sengupta,Ankita Ghatak,A. K. Raychaudhuri
标识
DOI:10.1088/1361-648x/ac1d6e
摘要
In this paper we report an investigation of electronic transport through the metal-ferroelectric-metal (MFM) multilayer consisting of AuCr/BaTiO3/Nb:SrTiO3over a temperature range of 100 K-300 K where BaTiO3(BTO) shows a series of structural phase transitions leading to change of magnitude as well as the orientation of the polarizationP→. We observed that the bias dependent barrier heights associated with the interfaces carry strong signature of the phase transitions in the BTO layer which lead to a strong temperature dependent asymmetric transport, when cooled down below room temperature. Specifically, it is observed that the temperature dependence is closely correlated to low temperature transitions in the BTO layer as revealed through the temperature dependent x-ray diffraction (XRD), capacitance as well as resistivity behavior of the BTO layer. There is substantial enhancement of the asymmetry in the device current that occurs at or close to temperaturesT2∼ 190 K where BTO shows a crystallographic phase change to the low temperature rhombohedral phase. The temperature dependent changes occur due to barrier modulation at the interfaces of AuCr/BaTiO3as well as BaTiO3/Nb:SrTiO3that softens on cooling due to inhomogenities present there. The change in barrier on change of the bias direction has been observed belowT2which arises from alignment of the polarization in-plane or out-of-plane as determined by tensile or compressive character of the in-plane strain in the BTO film. We also discuss the effect of space charge determined by the oxygen vacancies in the interface region, regulated by the applied bias.
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