Operation Up to 600K of Vertical β-Ga2O3 Schottky Rectifier With 754V Reverse Breakdown Voltage

There are opportunities for the realization of high performance β-Ga ₂ O ₃ devices given the theoretically superior figure of merits due to its ultra-wide energy bandgap. The availability of bulk-grown, large diameter substrates can lower the manufacturing cost for β-Ga ₂ O ₃ power devices for high voltage applications. There are numerous recent advancements in device performance for Ga ₂ O ₃ diodes, including a 5A/700V junction Schottky barrier diode implemented with p-type NiO layer [1] , 1.86kV p-n junction diode with NiO heterojunction [2] , as well as demonstrations of >100A of absolute forward current using conventional field plated Schottky diodes [3] . Wide energy bandgap materials are suitable for high temperature as well as high breakdown voltage applications. The ability to operate in high temperature enables wide bandgap devices to be attractive in terms of reduced package size and minimal requirement for cooling. Hindered by its low thermal conductivity, demonstrations of operation at high temperature for β-Ga ₂ O ₃ are fairly limited [4] . In this work, we report operation of field plated Schottky barrier diodes up to 1462, 948 and 754 V of reverse breakdown voltage at 400, 500 and 600K, respectively, with reasonable leakage current density.