Progress in Low-temperature Surface Passivation of Silicon Solar Cells using Remote-plasma Silicon Nitride

钝化 材料科学 氮化硅 远程等离子体 薄脆饼 光电子学 等离子体增强化学气相沉积 太阳能电池 载流子寿命 晶体硅 纳米晶硅 化学气相沉积 等离子体 纳米技术 图层(电子) 非晶硅 物理 量子力学
作者
Armin G. Aberle,Rudolf Hezel
出处
期刊:Progress in Photovoltaics [Wiley]
卷期号:5 (1): 29-50 被引量:160
标识
DOI:10.1002/(sici)1099-159x(199701/02)5:1<29::aid-pip149>3.0.co;2-m
摘要

Using a remote-plasma technique as opposed to the conventional direct-plasma technique, significant progress has been obtained at ISFH in the area of low-temperature surface passivation of p-type crystalline silicon solar cells by means of silicon nitride (SiN) films fabricated at 350–400°C in a plasma-enhanced chemical vapour deposition system. If applied to the rear surface of the low-resistivity p-type substrates, the remote-plasma SiN films provide outstanding surface recombination velocities (SRVs) as low as 4 cm s−1, which is by a clear margin the lowest value ever obtained on a low-resistivity p-Si wafer passivated by a solid film, including highest quality thermal oxides. Compared to direct-plasma SiN films or thermally grown oxides, the remote-plasma films not only provide significantly better SRVs on low-resistivity p-silicon wafers, but also an enormously improved stability against ultraviolet (UV) light. The potential of these remote-plasma silicon nitride films for silicon solar cell applications is further increased by the fact that they provide a surface passivation on phosphorus-diffused emitters which is comparable to high-quality thermal oxides. Furthermore, if combined with a thermal oxide and a caesium treatment, the films induce a UV-stable inversion-layer emitter of outstanding electronic quality. Due to the low deposition temperature and the high refraction index, these remote-plasma SiN films act as highly efficient surface-passivating antireflection coatings. Application of these films to cost-effective silicon solar cell designs presently under development at ISFH turned out to be most successful, as demonstrated by diffused p-n junction cells with efficiencies above 19%, by bifacial p-n junction cells with front and rear efficiencies above 18%, by mask-free evaporated p-n junction cells with efficiencies above 18% and by MIS inversion-layer cells with a new record efficiency of above 17%. All cells are found to be stable during a UV test corresponding to more than 4 years of glass-encapsulated outdoor operation. © 1997 John Wiley & Sons, Ltd.
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