(Ba0.98Nd0.02)(Ti1-xZrx)O3(BTNZ) ceramics were prepared using solid phase synthesis method at the sintering temperature of 1 270 ℃.The effects of Zr-doping amount on microstructure and dielectric properties of the ceramic were investigated.The results show that the dielectric peak moves to the room temperature with the increase of Zr dopant,that Zr4+ replace the Ti4+ of BaTiO3 improve the dielectric properties of the BTNZ ceramics,and when the amount of Zr4+ doping is x=0.01,the r is 7 200.