石墨烯
材料科学
异质结
氮化硼
石墨烯纳米带
六方氮化硼
半导体
纳米技术
电子迁移率
带隙
光电子学
凝聚态物理
物理
作者
Jingang Wang,Fengcai Ma,Wenjie Liang,Mengtao Sun
标识
DOI:10.1016/j.mtphys.2017.07.001
摘要
Two-dimensional (2D) graphene has unique electrical properties such as high mobility and ballistic transport at room temperature. Two-dimensional hexagonal boron nitride (h-BN) has similar lattice structure to graphene and has a lattice mismatch with graphene of less than 1.7%. At the same time, h-BN has an atomic level of flat surface, B atoms and N atoms saturated into the bond, the graphene based on h-BN substrate has a very high mobility, which was considered the highest among the insulating substrates. H-BN is an insulator or wide bandgap semiconductor with excellent mechanical properties and excellent thermal and chemical stability. When a heterostructures of graphene and h-BN is formed, the complex exhibits its own unique electrical properties; this enables to have a broad prospect in the fabrication of nanoelectronic devices.
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