7.4 nm linewidth Pt nanowires by electron-beam lithography using non-chemically amplified positive-tone resist and post-exposure bake

Abstract 7.4 nm linewidth Pt nanowires were demonstrated on SiO 2 /Si substrates via electron-beam lithography using a non-chemically amplified positive resist ZEP520A and post-exposure bake (PEB) treatment. The effect of the PEB treatment conditions on the nanowires’ characteristics was investigated. As the PEB temperature and time increased, a decrease in the mean linewidth and an improvement of the line-width (line-edge) roughness of the nanowires were observed. Pt nanowires with an ultrafine linewidth of 7.4 nm were successfully fabricated using the optimal condition of 100 °C for 2 min, verifying the effectiveness of PEB for fabricating sub-10 nm linewidth robust metal nanowires.