Electric‐Field‐Assisted PECVD for Growth of High‐Purity Horizontally Aligned Semiconducting Carbon Nanotube Arrays

Abstract Semiconducting single‐walled carbon nanotube (SWNT) horizontal arrays hold great promise for the development of next‐generation, energy‐efficient integrated circuits. While conventional chemical vapor deposition synthesis typically yields structurally diverse carbon nanotubes, achieving high‐purity semiconducting SWNT horizontal arrays remains a major challenge. In this study, an electric‐field‐assisted plasma‐enhanced chemical vapor deposition (PECVD) technique is introduced that enables the direct synthesis of high‐purity semiconducting SWNT arrays. This method capitalizes on the inherent plasma sheath and the abundance of charged particles within the PECVD system to control charge accumulation on SWNTs. By inducing negative charge accumulation, the energy states of semiconducting nanotubes are effectively reduced, rendering them thermodynamically favored products, thereby enhancing semiconducting‐tube purity in the resulting arrays. Additionally, the applied electric field modulates the growth kinetics of the SWNTs, ensuring efficient growth and high‐density arrays. Utilizing this approach, semiconducting SWNT arrays are successfully synthesized with a purity of up to 96%. This electric‐field‐assisted PECVD technique represents a promising strategy for the controlled preparation of SWNTs, paving the way for advancements in carbon nanotube‐based electronics.