Isotropic plasma-thermal atomic layer etching of superconducting titanium nitride films using sequential exposures of molecular oxygen and SF6/H2 plasma

Microwave loss in superconducting TiN films is attributed to two-level systems in various interfaces arising in part from oxidation and microfabrication-induced damage. Atomic layer etching (ALE) is an emerging subtractive fabrication method which is capable of etching with angstrom-scale etch depth control and potentially less damage. However, while ALE processes for TiN have been reported, they either employ HF vapor, incurring practical complications, or the etch rate lacks the desired control. Furthermore, the superconducting characteristics of the etched films have not been characterized. Here, we report an isotropic plasma-thermal TiN ALE process consisting of sequential exposures to molecular oxygen and an SF6/H2 plasma. For certain ratios of SF6:H2 flow rates, we observe selective etching of TiO2 over TiN, enabling self-limiting etching within a cycle. Etch rates were measured to vary from 1.1 Å/cycle at 150°C to 3.2 Å/cycle at 350°C using ex situ ellipsometry. We demonstrate that the superconducting critical temperature of the etched film does not decrease beyond that expected from the decrease in film thickness, highlighting the low-damage nature of the process. These findings have relevance for applications of TiN in microwave kinetic inductance detectors and superconducting qubits.