The impact of oxidation voltage on the switching characteristics of Ag/TiO2/Ti nanotube memristor

Titanium dioxide is one of the earliest materials used in memristors. It is widely studied and researched due to its advantages of the simple preparation process, high dielectric constant, wide bandgap and chemical stability. In this paper, a two-step anodization process was used to prepare the oxidized nanotubes array, which served as the foundation for fabricating Ag/TiO 2 /Ti memristors. The research delved into the impact of diverse oxidation voltages on the resistive performance of memristor and discussed the underlying mechanism for resultant performance.