电容器
沉降时间
带宽(计算)
CMOS芯片
瞬态响应
Boosting(机器学习)
计算机科学
电子工程
电压
物理
电气工程
阶跃响应
工程类
电信
人工智能
控制工程
作者
Chan-Kyu Lee,Chanho Lee,Young-Jun Jeon,Young-Ju Oh,Byunghun Lee,Sung-Wan Hong
出处
期刊:IEEE Transactions on Industrial Electronics
[Institute of Electrical and Electronics Engineers]
日期:2023-01-01
卷期号:: 1-5
标识
DOI:10.1109/tie.2023.3332996
摘要
This article presents a capacitor-less low-dropout regulator (LDO) using a bandwidth boosting technique, which is based on a stable class B structure, and an improved buffer to achieve a fast transient response. In measurement, this LDO supplies a maximum load current of 300 mA at a dropout voltage of 200 mV and achieves the best normalized figures of merit of 1.52 ns·mV. The proposed LDO is implemented in a 0.5 μ m CMOS process and occupies an area of 0.130 mm 2 .
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