20 µm Micro‐LEDs Mass Transfer via Laser‐Induced In Situ Nanoparticles Resonance Enhancement

Abstract Ultrafast laser is expected as a promising strategy for micro‐LEDs (µ‐LEDs) transfer due to its inherent property of suppressing thermal effects. However, its ultrahigh peak power and the unclear transfer mechanism make its transfer quality and efficiency unsatisfactory. Here, the study reports the high‐precision mass transfer of 20 µm fine‐pitch µ‐LEDs via in situ nanoparticles (NPs) resonance enhancement in burst mode ultraviolet picosecond laser irradiation. This technique suppresses the thermal melting effect and rapid cooling behavior of plasma by temporal modulation of the burst mode, generating NPs‐induced resonance enhancement that accurately and controllable drives a single unit up to tens of thousands of µ‐LEDs. The transfer of large µ‐LED arrays with more than 180 000 chips is also demonstrated, showing a transfer yield close to 99.9%, a transfer speed of 700 pcs s −1 , and a transfer error of <±1.2 µm. The transferred µ‐LEDs perform excellent optoelectronic properties and enable reliable device operation regardless of complex strain environments, providing a reliable strategy for preparing broader classes of 3D integrated photonics devices.