泥浆
化学机械平面化
抛光
材料科学
表面粗糙度
Crystal(编程语言)
表面光洁度
晶体结构
化学工程
冶金
纳米技术
复合材料
结晶学
化学
工程类
计算机科学
程序设计语言
作者
Qiubo Li,Lei Liu,Jiaoxian Yu,Shouzhi Wang,Guodong Wang,Zhongxin Wang,Zhanguo Qi,Xuanyi Zhao,Guangxia Liu,Xiangang Xu,Lei Zhang
标识
DOI:10.1016/j.apsusc.2024.159396
摘要
A remarkable improvement in the chemical–mechanical polishing (CMP) of GaN using a weakly alkaline ZrO2–SiO2 based slurry is described in detail, and an almost complete atomic step-platform structure with a surface roughness (Ra) of 0.059 nm is obtained. ZrO2 nanoparticles were added to the CMP slurry to replace part of the SiO2 to obtain a higher removal rate. When the content of ZrO2 reaches 0.5 wt%, the material removal rate of GaN is increased by 47.5 % compared with that of SiO2 with equal content, which significantly improves the material removal rate (MRR) of GaN, and does not destroy the atomic ladder-platform structure. In addition, we also investigate the causes of the formation of atomic ladder-terrace morphology on Ga-face, and describe the removal mechanism of materials in CMP process.
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