Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platform

In this letter, we report the first demonstration of monolithically integrated ultraviolet (UV) light emitting diodes (LEDs) and visible-blind UV photodetectors (PDs) employing the same p-GaN/AlGaN/GaN epi-structures grown on Si. Due to the radiative recombination of holes from the p-GaN layer with electrons from the 2-D electron gas (2DEG) accumulating at the AlGaN/GaN heterointerface, the forward biased LED with p-GaN/AlGaN/GaN junction exhibits uniform light emission at 360 nm. Facilitated by the high-mobility 2DEG channel governed by a p-GaN optical gate, the visible-blind phototransistor-type PDs show a low dark current of ∼10 −7 mA/mm and a high responsivity of 3.5×10 5 A/W. Consequently, high-sensitivity photo response with a large photo-to-dark current ratio of over 10 6 and a response time less than 0.5 s is achieved in the PD under the UV illumination from the on-chip adjacent LED. The demonstrated simple integration scheme of high-performance UV PDs and LEDs shows great potential for various applications such as compact opto-isolators.