(Invited) Aspect Ratio Trapping: A Unique Technology for Integrating Ge and III-Vs with Silicon CMOS

This paper describes the recent development of the Aspect Ratio Trapping (ART) heterointegration technique. This technique uses high aspect ratio sub-micron trenches to trap threading dislocations, greatly reducing the dislocation density of lattice mismatched materials grown on silicon. ART is shown to be very effective for a wide variety of materials including Ge, GaAs and InP. It has been combined with epitaxial lateral overgrowth to create long, 18 micron wide strips of low dislocation density material. ART has been used to integrate many types of Ge and III-V devices on silicon including GaAs MOSFETs, GaAs lasers, GaAs tunnel diodes and a silicon infrared imager chip with monolithically integrated Ge photodiodes.