材料科学
残余应力
化学气相沉积
复合材料
压力(语言学)
图层(电子)
沉积(地质)
极限抗拉强度
抗压强度
多晶硅耗尽效应
悬臂梁
光电子学
电气工程
晶体管
电压
语言学
生物
栅氧化层
工程类
哲学
古生物学
沉积物
作者
Jie Yang,H. Kahn,Anqiang He,S.M. Phillips,A. H. Heuer
摘要
Polysilicon films deposited by low-pressure chemical vapor deposition (LPCVD) exhibit tensile or compressive residual stresses, depending on the deposition temperature. Polysilicon films composed of alternating tensile and compressive layers can display any overall stress value between those of the individual layers, including a state of zero overall residual stress, depending on the relative thickness of each layer. The residual stress gradient can be similarly controlled by the layer thicknesses and distribution. This has been demonstrated with a ten-layer near-zero stress (<10 MPa), near-zero stress gradient (/spl les/0.2 MPa//spl mu/m) polysilicon film, containing flat cantilever beams whose length-thickness ratios exceed 150. Using multilayer deposition to control the stresses and stress gradients of polysilicon films is termed the MultiPoly process.
科研通智能强力驱动
Strongly Powered by AbleSci AI