Real-time, noninvasive monitoring of ion energy and ion current at a wafer surface during plasma etching

薄脆饼 离子 蚀刻(微加工) 离子流 等离子体 感应耦合等离子体 电压 材料科学 反应离子刻蚀 离子源 等离子体刻蚀 分析化学(期刊) 光电子学 化学 纳米技术 电气工程 物理 工程类 有机化学 量子力学 色谱法 图层(电子)
作者
Mark A. Sobolewski
出处
期刊:Journal of vacuum science & technology [American Institute of Physics]
卷期号:24 (5): 1892-1905 被引量:25
标识
DOI:10.1116/1.2335862
摘要

A noninvasive, nonperturbing technique for real-time monitoring of ion energy distributions and total ion current at a wafer surface during plasma processing has been used to monitor rapid changes in CF4∕Ar etching plasmas in an inductively coupled, rf-biased plasma reactor. To mimic the effects of process recipe steps or reactor malfunctions, perturbations were made in the inductive source power, gas flow, and pressure, and the resulting effects on total ion current, sheath voltage, and ion energy were monitored. During etching of a thermal silicon dioxide film, smaller changes, which are caused by the etch process itself, were also observed. Sheath voltages determined by the noninvasive technique were in good agreement with simultaneous measurements made using a capacitive probe. In addition to providing a demonstration of the speed and accuracy of the technique, the results also provide useful information about the relative importance of different types of equipment malfunctions and suggest methods for minimizing their effects. In particular, operating at constant bias voltage, instead of constant bias power, gave more stable ion energies. The physical mechanisms that cause the observed changes in ion energy are discussed, and a comparison to other process monitoring methods is presented. No other noninvasive, nonperturbing method yields ion current or ion energies as accurately as the technique presented here.
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