a-IGZO TFTs With Inductively Coupled Plasma Chemical Vapor Deposited ${\rm SiO}_{x}$ Gate Dielectric

In this brief, amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) are fabricated at . Inductively coupled plasma chemical vapor deposition (ICP-CVD) is used to grow SiO _x gate dielectric of the a-IGZO TFTs. The fabricated devices exhibit a high saturation mobility of 26.85 cm ² /V·s, a steep subthreshold swing of 0.145 V/decade, and an ON/OFF current ratio of 2.3×10 ⁷ . Atomic force microscope and scanning electron microscope images show that the surface characteristics of the ICP-CVD SiO _x gate dielectric are much superior to those of the conventional plasma-enhanced CVD SiO _x . It is suggested that the superior surface characteristics of the ICP-CVD SiO _x are the main origin of the high performance of the a-IGZO TFTs with the ICP-CVD SiO _x gate dielectric.