期刊:IEEE Microwave Magazine [Institute of Electrical and Electronics Engineers] 日期:2010-02-01卷期号:11 (1): 86-96被引量:76
标识
DOI:10.1109/mmm.2009.935203
摘要
As CMOS technology is scaled down and adopted for many RF and millimeter-wave radio systems, design of T/R switches in CMOS has received considerable attention. Many T/R switches designed in 0.5 ¿m 65 nm CMOS processes have been reported. Table 4 summarizes these T/R switches. Some of them have become great candidates for WLAN and UWB radios. However, none of them met the requirements of mobile cellular and WPAN 60-GHz radios. CMOS device innovations and novel ideas such as artificial dielectric strips and bandgap structures may provide a comprehensive solution to the challenges of design of T/R switches for mobile cellular and 60-GHz radios.