材料科学
发光二极管
欧姆接触
光电子学
二极管
倒装芯片
紫外线
光学
图层(电子)
纳米技术
胶粘剂
物理
作者
Gai Zhang,Bin Gao,Tong Jia,Chunshuang Chu,Chao Fan,Yonghui Zhang,Xiangpeng Zhang,Naixin Liu,Zi Qiang Zhang,Jianchang Yan
出处
期刊:Optics Express
[The Optical Society]
日期:2022-04-22
卷期号:30 (11): 17781-17781
摘要
Low light extraction efficiency (LEE), high forward voltage and severe self-heating effect greatly affect the performance for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). In this work, surface-textured Ga-face n-AlGaN is fabricated low-costly using self-assembled SiO2 nanosphere as hard mask. The experimental results manifest that when compared with conventional DUV LEDs, the optical power, the forward voltage and the thermal characteristics for the DUV LEDs with surface-textured Ga-face n-AlGaN are improved obviously. It is because the surface-textured Ga-face n-AlGaN between mesa and the n-electrode can be used as the scattering center for trapped light, and this leads to the enhanced LEE. Furthermore, thanks to the surface-textured n-AlGaN under the n-electrode, the n-type ohmic contact area can be increased effectively. Therefore, the n-type ohmic contact resistance can be reduced and the better heat dissipation can be attained for the proposed flip-chip DUV LED.
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