材料科学
电子结构
氮化物
合金
带隙
化学稳定性
二进制数
格子(音乐)
离子
电子能带结构
凝聚态物理
化学物理
热力学
光电子学
纳米技术
冶金
物理
图层(电子)
数学
声学
量子力学
算术
作者
Aron Walsh,Su‐Huai Wei
标识
DOI:10.1103/physrevb.76.195208
摘要
Using selective chemical mutation, we propose and investigate the electronic structure of an alloy with the potential to fill the green gap left open by existing InGaN based emission devices. The small mismatch between LiMgN and LiZnN, along with electronic band gaps spanning the visible range, makes them good candidates. Calculations are performed using a first-principles band structure method, with the special quasirandom structure approach employed to generate the random alloys. Comparison of LiMgN and LiZnN with their binary nitride analogs is made, and the energetic and electronic effects of alloy ordering are investigated. These alloys exhibit negative mixing enthalpies atypical of traditional binary nitride systems, which is explained in terms of the low lattice strain and the chemical bonding effects of the interstitial Li ions.
科研通智能强力驱动
Strongly Powered by AbleSci AI