材料科学
光电流
暗电流
像素
光电子学
炸薯条
光子学
光学
锗
物理
硅
光电二极管
光电探测器
电气工程
工程类
作者
Michael Oehme,Mathias Kaschel,S Epple,Maurice Wanitzek,Zili Yu,Daniel Schwarz,Ann-Christin Kollner,Joachim N. Burghartz,Jörg Schulze
出处
期刊:IEEE Sensors Journal
[Institute of Electrical and Electronics Engineers]
日期:2021-09-01
卷期号:21 (17): 18696-18705
被引量:10
标识
DOI:10.1109/jsen.2021.3091203
摘要
In this paper, a near-infrared “Ge-on-Si” camera with backside illumination, is presented. The camera consists of a photonic chip, a readout chip, and a commercial microcontroller, which is connected to a laptop via USB. The functionality of two-dimensional ( 10×10 pixels) as well as one-dimensional ( 64×1 pixel) “Ge-on-Si” pixel arrays with a pitch of 25 μm are demonstrated. The photonic chip consists of basic CMOS technology process in combination with a molecular beam epitaxy growth process. With this technology and the backside illumination a high fill-factor of 74% is achieved. Further the “Ge-on-Si” detectors are operated under zero bias operation in order to minimize the dark current and thus to maximize the signal-to-noise ratio. This enables dark currents better than 100 pA to be achieved in each pixel. A linear behavior between photocurrent and optical power of the “Ge-on-Si” detectors over a large dynamic range for optical powers between 10 -7 W and 10 -2 W is shown. With relatively thin Ge absorption layers of only 400 nm, optical responsivities of 0.36 A/W at a wavelength of 1310 nm could be achieved. The functionality of the “Ge-on-Si” camera is demonstrated by the movement of a single mode fiber over the photonic chip at a wavelength of 1310 nm.
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