薄脆饼
晶体硅
材料科学
切片
黑硅
蚀刻(微加工)
太阳能电池
各向同性腐蚀
扫描电子显微镜
硅
纳米技术
光电子学
复合材料
计算机科学
图层(电子)
万维网
作者
Ashkan Vakilipour Takaloo,Fırat Es,Gülsen Baytemir,Raşit Turan
标识
DOI:10.1088/2053-1591/aaceec
摘要
The texturing of silicon surfaces is a well-known method of reducing the reflection from the surface of crystalline Si solar cell devices. With the utilization of diamond wires in recent advances in wafer slicing technology, surface texturing for the multi-crystalline Si wafers by the traditional acid-based texturing technique has become difficult. Metal-Assisted Etching (MAE) has been shown to be a promising and low-cost alternative to the traditional acid-based isotropic texturing. This paper reports, for the first time, a new single-step Ni-assisted etching technique to obtain nano-scale porous structures, that is, black silicon on multi-crystalline wafers. We observed lower reflection results in comparison with standard isotropic texturing using a standard acid solution. The structural and optical properties of the surface were identified through reflection measurements and scanning electron microscopy imaging. As a final step, the optimized texturing process was applied to multi-crystalline solar cell devices and showed promising results regarding cell performance parameters.
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