Thermally Deposited Sb2S3: Bi Thin Films for Solar Cell Absorber

In recent years there has been growing interest in the materials suitable for real time storage application. Sb2S3 is a prospective material in this regard due to good photoconductivity. In this contest, thin films of Sb2S3 and Bi3+ doped Sb2S3 were deposited onto the transparent glass substrate by thermal evaporation method. The structural, optical and electrical properties were investigated by XRD, UV-Visible, Photoluminescence, and Impedance spectroscopic techniques. The XRD patterns confirm the orthorhombic crystal structured Sb2S3 and the inclusion of Bi3+ ions in the crystal system. UV-Visible analysis exhibited wide optical absorption in the visible region for both Sb2S3 and Bi3+ doped films and their band gap energy was found to be 1.60 eV and 1.55 eV respectively. The photoluminescence spectra showed a strong emission at 361nm. The value of capacitance, dielectric constant and real part of impedance decreases with increasing frequency for both the samples.