材料科学
聚醚酰亚胺
钙钛矿(结构)
电极
透射率
氧化铟锡
光电子学
非阻塞I/O
薄板电阻
平面的
薄膜
图层(电子)
纳米技术
化学工程
复合材料
工程类
物理化学
计算机图形学(图像)
生物化学
催化作用
化学
聚合物
计算机科学
作者
Zhiqin Ying,Wei Chen,Yi Lin,Zhenfei He,Tian Chen,Yudong Zhu,Xusheng Zhang,Xi Yang,Aleksandra B. Djurišić,Zhubing He
标识
DOI:10.1002/adom.201801409
摘要
Abstract Although it exhibits great potential as the rear transparent electrode (RTE) material in semitransparent devices, the ultrathin silver film still faces some significant challenges, such as surface plasmonic effect induced optical loss, the conflict between conductivity and transmittance, and the band level mismatch at device interfaces. In this work, a novel combination of ZrAcac/PEI/Ag/Ta 2 O 5 is employed as the RTE of the semitransparent perovskite solar cells in the planar inverted device structure of “indium‐tin‐oxide (ITO)/NiO x /MAPbI 3 /PC 61 BM/ZrAcac/PEI/Ag/Ta 2 O 5 .” Interface engineering with ZrAcac/PEI enables a significant increase in the device efficiency for 100 nm thick Ag electrode, from 17.48% to 18.84%. Ultrathin 9 nm Ag film coated on polyetherimide (PEI) exhibits a root‐mean‐square roughness of 0.7 nm and a sheet resistance of 8.7 Ω □ −1 , which results in the typical device conversion efficiency of 13.40% and an average transmittance (AT) of 43.75% in wavelength region from 500 to 1200 nm simultaneously. That remarkable enhancement in AT from 12.47% to 43.75% can be ascribed to the synergy effect of Ta 2 O 5 and the ultrathin silver film in optics. The successful interface engineering of RTE paves an alternative and promising way for high performance semitransparent solar cells, and definitely broadens the scope of their applications.
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