Advances in Research on Ferroelectric Thin Films and Ferroelectric Memory

Ferroelectric thin films with ferroelectricity and the thickness ranging from nanometers to micrometers have attracted a great deal of attention for the potential applications in non-volatile ferroelectric random access memory(FeRAM).The preparation and modification of Bi4Ti3O12(BIT)-based ferroelectric films with lead-free chemical composition and excellent fatigue-free property and three failure mechanisms are analysed.The current research status of the ferroelectric memory are illustrated in this review.Finally future research direction on the ferroelectric thin films and ferroelectric memory are mentioned.