硒化铜铟镓太阳电池
透射率
图层(电子)
材料科学
薄层
薄膜太阳能电池
光电子学
光伏系统
化学工程
纳米技术
工程类
电气工程
作者
Muhammad Saifullah,SeJin Ahn,Jihye Gwak,Seungkyu Ahn,Kihwan Kim,Jun-Sik Cho,Joo Hyung Park,Young Joo Eo,Ara Cho,Jinsu Yoo,Jae Ho Yun
摘要
The insertion of sulfurized-AgGa layer at CIGS/ITO interface reduced the bulk and back surface recombination and thus ameliorated the PV performance without adversely affecting the cell’s visible transmittance.
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