Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics

In recent years, the emergence of the ultrawide‐bandgap (UWBG) semiconductor materials that have an extremely large bandgap, exceeding 5eV including AlGaN/AlN, diamond, β-Ga 2 O 3 , and cubic BN, provides a new opportunity in myriad applications in electronic, optoelectronic and photonics with superior performance matrix than conventional WBG materials. In this review paper, we will focus on high power and high frequency devices based on two most promising UWBG semiconductors, β-Ga 2 O 3 and diamond among various UWBG semiconductor devices. These two UWBG semiconductors have gained substantial attention in recent years due to breakthroughs in their growth technique as well as various device engineering efforts. Therefore, we will review recent advances in high power and high frequency devices based on β-Ga 2 O 3 and diamond in terms of device performance metrics such as breakdown voltage, power gain, cut off frequency and maximum operating frequency.