Reduced current collapse in multi-fingered AlGaN/GaN MOS-HEMTs with dual field plate

This paper describes suppression of current collapse by field-plate (FP) in AlGaN/GaN MOS-HEMTs. Current collapse reduction was confirmed for a multi-gate fingered MOS-HEMT with a total gate width of 10 mm. Moreover, we have fabricated a 5-A class MOS-HEMT with both gate-FP and source-FP (dual-FP), showing more complete suppression in current collapse as compared to that with only gate-FP.