Dielectric properties of mono- and bilayers determined from first principles

Two-dimensional materials, especially Transition Metal Dichalcogenide (TMDs), have emerged as a potential alternative to silicon for future electronic devices. We study the static out-of-plane dielectric constant for a range of single and bilayer two-dimensional materials. Dielectric response of these two-dimensional materials is studied using Density Functional Theory (DFT). Our calculations reveal that the dielectric constant increases with increasing chalcogen atomic number. The results also show that the ionic contribution to the dielectric response is much smaller compared to the electronic contribution.