Crystal growth and properties of γ-CuI:Cl ultrafast scintillator

As a potential ultrafast scintillator, Cl-doped γ-CuI single crystal was successfully grown in acetonitrile solvent through evaporation technique, and its crystal structure and luminescence characteristics were investigated in detail. The results of photoluminescence and X-ray excited luminescence spectra indicated that the near-band-edge (NBE) emission of the crystal was significantly enhanced, and simultaneously its deep-level (DL) emission was suppressed greatly. And the NBE emission of the crystal exhibited a sub-nanosecond decay time. It is demonstrated that a superior luminescence performance can be expected for Cl-doped γ-CuI crystal by increasing dopant concentration. This work offers a suggestion for optimizing the scintillation properties of the γ-CuI crystal.