材料科学
兴奋剂
量子点
光电子学
离子注入
凝聚态物理
金属
电子结构
带隙
离子
物理
量子力学
冶金
作者
Hu Liang-Jun,Yonghai Chen,Xiaoling Ye,Zhanguo Wang
出处
期刊:Chinese Physics
[Science Press]
日期:2007-01-01
卷期号:56 (8): 4930-4930
被引量:1
摘要
V+ were implanted into anantase films by metal ion implantation. The electronic band structures of TiO2 films doped with V+ were calculated using a self-consistent full-potential linearized augmented plane-wave method with
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