Effect of Stress Engineering on the Electrical Properties of BaTiO3Thin Film

Nano porous LaNiO 3 (LNO) thin-film oxide electrodes were deposited on Si substrates by a chemical solution deposition (CSD) to control the residual stress in sputtered BaTiO 3 (BTO) thin film. The BTO thin film was deposited on the LNO/Si substrate by RF magnetron sputtering to elucidate the effect of the LNO thin-film electrode on the ferroelectric and dielectric properties of the resulting BTO thin film. The orientation of the LNO thin film was successfully controlled in the (100) direction even on the Si substrates, and therefore, the resulting BTO thin films also exhibited preferred orientation in the (001) direction. The BTO thin films deposited at a relatively low temperature of 500 °C exhibited a good hysteresis loop, indicating the usefulness of our CSD-derived LNO thin-film electrode. We also investigated the effect of the thickness of the LNO thin-film electrode on the ferroelectric property of the resulting BTO thin films.