GaAs Growth Using TMG and AsCl3

A new vapor‐phase epitaxial (VPE) technique using trimethylgallium (TMG) and arsenic trichloride has been developed. This VPE is free from the source instability in chloride VPE and fatally toxic arsine in hydride and metalorganic VPE. The growth reaction is based on the gallium chloride transport method. Growth rates of 300–4000 Å/min were obtained at growth temperatures between 650° and 780°C. At III/V ratios below 2.3, the growth rate increased as the TMG flow rate increased and the flow rate decreased. The growth rate was independent of the temperature in the gas mixing region of the reactor. High purity with a 77 K mobility of 36,000 cm2/Vs was obtained.