On the Laser Generation in Two-Dimensional Materials with Pumping by Quasitrapped Modes

A model has been proposed to describe the laser generation of two-dimensional semiconductor films with near-field pumping by quasitrapped modes excited in dielectric metasurfaces. A metastructure consisting of a Si metasurface coated with a MoTe 2 film, where narrow-band resonance of a quasitrapped mode is joined with a broad exciton resonance of a two-dimensional material, has been designed. Threshold conditions for generation in the MoTe 2 film with pumping by quasitrapped modes have been determined. The possibility of polarization control of the emission of the proposed metastructure has been demonstrated.