同步辐射
材料科学
氮化物
合金
衍射
原位
同步加速器
X射线晶体学
X射线
结晶学
光学
冶金
纳米技术
物理
化学
气象学
图层(电子)
作者
Yu. F. Ivanov,Yu H Akhmadeev,N. A. Prokopenko,О. В. Крысина,N. N. Koval,Е. А. Петрикова,В. В. Шугуров,О. С. Толкачев
标识
DOI:10.1615/hightempmatproc.2024056530
摘要
The formation of nitride coatings based on the titanium (Ti), niobium (Nb), zirconium (Zr), tantalum (Ta), and hafnium (Hf) (i.e., TiNbZrTaHf) high-entropy alloy (HEA) was studied by in situ X-ray diffraction analysis using synchrotron radiation. HEA-based nitride coatings were formed as thin films (1.5-2 μm) by plasma-assisted vacuum arc deposition. The multielement gas-metal plasma used was produced by evaporating a near-equiatomic TiNbZrTaHf cathode. In studying the thin film growth in situ with high time resolution, the VEPP-3 electron storage ring was used as a synchrotron radiation source. To verify the data of the in situ X-ray diffraction analysis, electron diffraction spectra of the films were obtained using transmission electron microscopy. It was found that the film growth was a multistage and multiphase process. The deposition of a metallic sublayer on the substrate before coating deposition (the first stage of film synthesis) was accompanied by the formation of a three-phase system represented by β, α, and ω metallic phases, which were in an amorphous-crystalline state. The nitride layer formed on the metal substrate was presented by metal-nitride (MeN) and MeN* phases, which differed in the type of crystal lattice. The diffraction lines of the nitride phases were blurred, which might have been due to the nanocrystalline state (0.7-1.2 nm) of the film.
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