Ultraviolet Photodetector Fabrication with Low‐Power Dissipation Based on Organic Suboptimal Source‐Gated Transistor Architecture and MoO3‐Doped Pentacene

Organic field-effect transistor (OFET)-based photodetectors have been extensively studied owing to their potential applications in various fields, such as imaging, communication, and environmental monitoring. However, the traditional OFET structure brings about high power consumption. Furthermore, their low electrical performance and light sensitivity must be improved to detect harmful UV rays that accelerate skin aging and cause vision degradation. One strategy to fabricate high-performance phototransistors involves the introduction of molybdenum trioxide (MoO₃), which serves as a dopant for pentacene, aiming to enhance electrical performance by increasing mobility and decreasing threshold voltage. In addition, the photoreactivity of MoO₃ in the UV spectrum is utilized to achieve enhanced light responsivity. In this work, a suboptimal source-gated transistor (sSGT) is introduced instead of a conventional OFET to exploit the work function difference between two electrodes and the active layer to achieve low-power consumption. The power of the sSGT is 1000 times lower than that of the OFET, demonstrating the low-power consumption. The findings indicate the potential fabrication method of high-performance UV phototransistors with low-power consumption induced by incorporating the MoO₃ and sSGT structure.