光电探测器
响应度
紫外线
材料科学
光电子学
光学
异质结
钙钛矿(结构)
比探测率
物理
化学
结晶学
作者
N. Cao,Lichun Zhang,Dou-Dou Liang,Yu Fang,Xiao Zhang,Xianling Meng,Xin Li,Fengzhou Zhao
出处
期刊:Optics Express
[Optica Publishing Group]
日期:2025-06-09
卷期号:33 (13): 28201-28201
摘要
Deep-ultraviolet photodetectors have promising applications in both civil and military fields, due to the advantage of effective light response without an external power supply. In this work, we proposed a self-powered deep-ultraviolet photodetector based on a p-Cs 3 Cu 2 I 5 /n-ZnGa 2 O 4 heterojunction fabricated by a pulsed laser deposition technique. Under 260 nm illumination and 0 V bias, the photodetector exhibited a maximum responsivity and specific detectivity of 1.2 mA/W and 1.65 × 10 11 Jones, respectively. The response and recovery times were 410 ms and 114 ms, respectively. The photodetector exhibited self-powered characteristics and detection capabilities within the wavelength range from 255 to 330 nm, demonstrating its potential for advancing self-powered deep-ultraviolet photodetector applications.
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