Analysis and simulation of channel and source-drain contact noise in Indium-Tin-Zinc-Oxide thin-film transistors

Abstract Abstract
The channel and source-drain contact noise in Indium-Tin-Zinc-Oxide (ITZO) TFTs are measured and simulated using the BSIM-BULK model. The noise performance of ITZO TFTs is primarily dominated by 1/f noise. At low gate voltages, low-frequency noise (LFN) is dominated by channel noise, which can be explained by McWhorter’s (∆N) theory. The drain current noise power spectral density (SID) is a function of gate voltage and drain current, reflecting the power distribution of noise at different frequencies. As gate voltage increases, the slope of the normalized SID with effective gate voltage changes from -2 to 2, indicating that contact noise becomes dominant. Furthermore, channel noise and contact noise are simulated in the sub-threshold and linear region of ITZO TFTs using the BSIM-BULK model.
Keywords: Indium-Tin-Zinc-Oxide, thin film transistor, contact noise, BSIM-BULK