点反射
Valleytronics公司
布里渊区
自旋电子学
凝聚态物理
物理
拉希巴效应
极化(电化学)
自旋极化
对称性破坏
镜像对称
铁磁性
量子力学
化学
电子
物理化学
作者
Sajjan Sheoran,Sanchi Monga,Ankita Phutela,Saswata Bhattacharya
标识
DOI:10.1021/acs.jpclett.2c03108
摘要
Using first-principles calculations, we report the electronic properties with a special focus on the band splitting in the WSi2N4 class of materials. Due to the broken inversion symmetry and strong spin-orbit coupling, we detect coupled spin-valley effects at the corners of the first Brillouin zone (BZ). Additionally, we observe cubically and linearly split bands around the Γ and M points, respectively. The in-plane mirror symmetry (σh) and reduced symmetry of the arbitrary k-point, enforce the persistent spin textures (PST) to occur in full BZ. We induce the Rashba splitting by breaking the σh through an out-of-plane external electric field (EEF). The inversion asymmetric site point group of the W atom introduces the hidden spin polarization in centrosymmetric layered bulk counterparts. Low energy k.p models demonstrate that the PST along the M-K line is robust to EEF and layer thickness, making them suitable for applications in spintronics and valleytronics.
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