Removal of Adsorbed Water on Si Wafers for Surface Activated Bonding

Wafer bonding at room temperature is a crucial technique for integrating and packaging advanced electronic devices. Surface activated bonding (SAB) is a promising technique to bond semiconductor wafers at room temperature, whose bond strength depends on the formation of atomic bonds at the bonding interface. In order to improve the bonding quality of SAB, in this work, we investigate the effect of the removal of the adsorbed water from Si wafer surfaces. Pre-bonding baking of Si wafers at 110°C resulted in improved bond strength by SAB. This approach is able to be applied for SAB for wider materials and applications.