化学计量学
碳化硅
材料科学
硅
杂质
化学工程
腐蚀
扩散
图层(电子)
冶金
无机化学
复合材料
化学
物理化学
有机化学
热力学
工程类
物理
作者
Han Liu,Ying Chen,Zhaohe Gao,Nadia Rohbeck,Ping Xiao
标识
DOI:10.1016/j.corsci.2023.111209
摘要
We report a study on the oxidation behaviour of stoichiometric and hyper-stoichiometric silicon carbide (SiC) with silicon impurity. In air, silica growth was parabolic at 1200 °C and 1600 °C on both SiCs but was faster on hyper-stoichiometric SiC. However, the oxidation kinetics was reversed in the steam due to the generation of a larger quantity of gaseous products and pore networks in silica on stoichiometric SiC, which resulted in easy ingress of steam and a reaction-controlled linear oxidation behaviour. In contrast, the pores in silica on hyper-stoichiometric SiC were mostly isolated, resulting in diffusion-controlled parabolic growth of the silica layer.
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