A Zero‐Voltage‐Writing Artificial Nervous System Based on Biosensor Integrated on Ferroelectric Tunnel Junction

Abstract The artificial nervous system proves the great potential for the emulation of complex neural signal transduction. However, a more bionic system design for bio‐signal transduction still lags behind that of physical signals, and relies on additional external sources. Here, this work presents a zero‐voltage‐writing artificial nervous system (ZANS) that integrates a bio‐source‐sensing device (BSSD) for ion‐based sensing and power generation with a hafnium‐zirconium oxide‐ferroelectric tunnel junction (HZO‐FTJ) for the continuously adjustable resistance state. The BSSD can use ion bio‐source as both perception and energy source, and then output voltage signals varied with the change of ion concentrations to the HZO‐FTJ, which completes the zero‐voltage‐writing neuromorphic bio‐signal modulation. In view of in/ex vivo biocompatibility, this work shows the precise muscle control of a rabbit leg by integrating the ZANS with a flexible nerve stimulation electrode. The independence on external source enhances the application potential of ZANS in robotics and prosthetics.