Growth of Ga<sub>2</sub>O<sub>3</sub> Thin Films on Si Substrates by Mist CVD Technique

Gallium oxide is receiving increased attention as a next-generation material for power devices having both low switching loss and high breakdown voltage. In this paper, we described the growth of Ga2O3 on Si substrates using mist chemical vapor deposition (CVD) technique. Firstly, amorphous Ga2O3 and polycrystalline Ga2O3 thin films were obtained on Si(111) substrates accompanying with rough surface conditions and low crystallinity. Secondly, <001> oriented κ-Ga2O3 thin films were grown on n-type Si(100) and Si(111) substrates by introducing ZnO buffer layers to avoid influence from surface oxide layers of Si substrates. The RMS value of κ-Ga2O3 was smaller than the values of amorphous Ga2O3 and polycrystalline Ga2O3 on Si(111). These results suggested that the ZnO buffer layer on Si played significant roles in crystallinity and improved planarity of κ-Ga2O3.